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Cadmium Telluride (CdTe) Solar Cell

In 1972, first CdTe/CdS solar cell was reported. It is a type of photovoltaic that uses Cadmium Telluride (CdTe) and Cadmium Sulphide (CdS) thin film for light absorption and charge extraction for generating electricity using the photovoltaic effect. Two major companies that are manufacturing CdTe solar cells are "Antec" in Germany and "First Solar" in US.       ...

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Staebler Wronski effect in Amorphous Silicon.

In the early stage of technology, amorphous silicon was found to be an interesting material because with doping it can be made P-type or N-type and provided an opportunity for the formation of junction and leading to the formation of solar cells. But after introducing sunlight radiation on solar cell, efficiency decreases and this effect is called Staebler Wronski effect.   ...

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Gallium Arsenide (GaAs) Solar Cells

Gallium Arsenide (GaAs) is a compound of two basic elements; Gallium and Arsenic. It is III-V direct bandgap semiconductor with 1.41 eV band gap, so relatively it can absorb (AM 1.5G spectrum) light more efficiently. This band gap can be varied by Aluminium (Al) or Indium (In) like AlGaAs or InGaAs. First GaAs solar cell was used in space application for Venera 3 mission ...